SOT-23_DMG3130LQ.pdf

1、General DescriptionThe uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a load switch or in PWM applications.FeaturesVDS-30VID(at VGS=-10V)-5.0ARDS(ON)(at VGS=-10V)50m(Max)RDS(ON)(at VGS=-4

2、.5V)65m(Max)RDS(ON)(at VGS=-2.5V)90m(Max)Absolute Maximum RatingsTA=25C unless otherwise notedParameterSymbolMaximumUnitsDrain-Source VoltageVDS-30VGate-Source VoltageVGS12VDrain Current-ContinuousTC=25CID-5.0ATC=100CID-3.5ADrain Current PulsedIDM-20AMaximum Power DissipationPD2.1WJunction and Stora

3、ge Temperature RangeTJ,TSTG-55 To 150Thermal CharacteristicsParameterSymbolTypMaxUnitThermal Resistance junction-caseRJc1.1/WThermal Resistance unction-to-AmbientRJA60/WGDSGDSSOT23 Enhancement Mode Power MOSFET P-Channel Rev: 01.06.20181/6DMG3130LQDMG3130LQElectrical Characteristics(TJ=25 unless oth

4、erwise noted)SymbolParameterConditionMinTypMaxUnitSTATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageVGS=0V ID=-250A-30VIDSSZero Gate Voltage Drain CurrentVDS=-30V,VGS=0V1AIGSSGate-Body Leakage CurrentVGS=12V,VDS=0V100nAVGS(th)Gate Threshold VoltageVDS=VGS,ID=-250A-0.5-0.9-1.5VRDS(ON)Drain-Source O

5、n-State ResistanceVGS=-10V,ID=-4.0A4150mVGS=-4.5V,ID=-3.5A5065mVGS=-2.5V,ID=-2.0A6090mDYNAMIC PARAMETERSClssInput CapacitanceVDS=-15V,VGS=0V,F=1.0MHz640pFCossOutput Capacitance80pFCrssReverse Transfer Capacitance55pFSWITCHING PARAMETERStd(on)Turn-on Delay TimeVDS=-15V,ID=-1A,VGS=-10V,RG=36.5nStrTurn

6、-on Rise Time3.5nStd(off)Turn-Off Delay Time41nStfTurn-Off Fall Time9nSQgTotal Gate ChargeVDS=-15V,ID=-4.0A,VGS=-10V14nCQgsGate-Source Charge1.5nCQgdGate-Drain Charge1.6nCVSDDiode Forward VoltageVGS=0V,ISD=-1A0.721.4VRgGate resistanceVGS=0V,VDS=0V,F=1MHz7Note：1.Repetitive Rating:Pulsed width limited

7、 by maximum junction temperature.2.The data tested by pulsed,pulse width 300us,duty cycle 2%.3.Essentially independent of operating temperature.Rev: 01.06.20182/6DMG3130LQTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS52100400 05 51 10 01 15 52 20 00 00 0.5 51 11 1.5 52 22 2.5 53 3-I-ID D(A(A)-V VG G

8、S S(Vo(Vol ltsts)F Fi ig gu ur re e 2 2:T Tr ra an ns sfefer r C Ch ha ar ra ac cteter ri is sti tic cs s (N(No otete E)E)2 20 04 40 06 60 08 80 01 10 00 00 02 24 46 68 81 10 0R RD DS S(O ON N)(m(m )-I-ID D(A(A)F Fi ig gu ur re e 3 3:O On n-R-Re es si is statan nc ce e v vs s.D Dr ra ai in n C Cu ur

9、 rr re en nt t a an nd d G Ga atete VoVol ltatag ge e (N(No otete E)E)1.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+010.00.20.40.60.81.01.2-IS(A)-VSD(Volts)Figure 6:Body-Diode Characteristics(Note E)25C125C0 0.8 81 11 1.2 21 1.4 41 1.6 61 1.8 80 02 25 55 50 07 75 51 10 00 01 12 25 51 15 50 01 17 75

10、 5N No or rmma al li iz ze ed d O On n-R-Re es si is statan nc ce eT Te emmp pe er ra atutur re e (C C)n n18 T TF Fi ig gu ur re e 4 4:O On n-R-Re es si is statan nc ce e v vs s.J Ju un nc cti tio oe emmp pe er ra atutur re e(N(No otete E)E)V VG GS S=-2-2.5 5V VI ID D=-2-2A AV VG GS S=-1-10 0V VI ID

11、 D=-4-4A AV VG GS S=-4-4.5 517V VI ID D=-3-3.7 7A A305070901101301500246810RDS(ON)(m )-VGS(Volts)Figure 5:On-Resistance vs.Gate-Source Voltage(Note E)2 25 5C C1 12 25 5C CV VD DS S=-5-5V VV VG GS S=-4-4.5 5V VV VG GS S=-1-10 0V VID=-4A25C125C0 05 51 10 01 15 52 20 02 25 50 01 12 23 34 45 5-I-ID D(A(

12、A)-V VD DS S(Vo(Vol ltsts)F Fi ig g 1 1:O On n-R-Re eg gi io on n C Ch ha ar ra ac cteter ri is sti tic cs s (N(No otete E)E)V VG GS S=-2-2.0 0V V-2 2.5 5V V1 10 0V V4 4.5 5V VV VG GS S=-2-2.5 5V V Rev: 01.06.20183/6DMG3130LQTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0 02 24 46 68 81 10 00 05 51

13、10 01 15 5-V VG GS S(Vo(Vol ltsts)Q Qg g(n(nC C)F Fi ig gu ur re e 7 7:G Ga atete-C-Ch ha ar rg ge e C Ch ha ar ra ac cteter ri is sti tic cs s0 02 20 00 04 40 00 06 60 00 08 80 00 01 10 00 00 00 05 51 10 01 15 52 20 02 25 5C Ca ap pa ac ci itatan nc ce e (p(pF F)-V-VD DS S(Vo(Vol ltsts)F Fi ig gu u

14、r re e 8 8:C Ca ap pa ac ci itatan nc ce e C Ch ha ar ra ac cteter ri is sti tic cs sC Ci issssC Co ossssC Cr rssssV VD DS S=-1-15 5V VI ID D=-4-4A A1 11 10 01 10 00 01 10 00 00 01 10 00 00 00 00 0.0 00 00 00 01 10 0.0 00 01 10 0.1 11 10 01 10 00 00 0PoPow we er r (W(W)PuPul ls se e WWi id dthth (s(

15、s)F Fi ig gu ur re e 1 10 0:SiSin ng gl le e PuPul ls se e PoPow we er r R Ra ati tin ng g J Ju un nc cti tio on n-to-to-A Ammb bi ie en nt t(N(No otete F F)T TA A=2 25 5C C0 0.0 00 0.1 11 1.0 01 10 0.0 01 10 00 0.0 00 0.0 01 10 0.1 11 11 10 01 10 00 0-I ID D(A Ammp ps s)-V VD DS S(V Vo ol lt ts s)F

16、 Fi ig gu ur re e 9 9:MMa ax xi immu umm F Fo or rw wa ar rd d B Bi ia as se ed d S Sa af fe e O Op pe er ra at ti in ng g A Ar re ea a (N No ot te e F F)1 10 0 s s1 10 0s s1 1mms sD DC CR RD DS(OS(ON N)l li immi it te ed dT TJ J(M(Ma ax x)=1 15 50 0C CT TA A=2 25 5C C1 10 00 0 s s1 10 0mms s0.0010.

17、010.11100.000010.00010.0010.010.11101001000Z JANormalized Transient Thermal ResistancePulse Width(s)Figure 11:Normalized Maximum Transient Thermal Impedance(Note F)Single PulseD=Ton/TTJ,PK=TA+PDM.ZJA.RJATonTPDIn descending orderD=0.5,0.3,0.1,0.05,0.02,0.01,single pulseRJA=125C/W Rev: 01.06.20184/6DM

18、G3130LQo on nVVDDCCI Ig gV Vd ds sD DU UT TVVDDCCV Vg gs sV Vg gs sQ Qg gQ Qg gs sQ Qg gd dC Ch ha ar rg ge eG Ga at te e C Ch ha ar rg ge e T Te es st t C Ci ir rc cu ui it t&WWa av ve ef fo or rmm-+-+-1 10 0V VV Vd dd dV Vg gs sI Id dVgsRgDUTVDCV Vg gs sV Vd ds sIdVgsU Un nc cl la ammp pe ed d I I

19、n nd du uc ct ti iv ve e S Sw wi it tc ch hi in ng g (U UI IS S)T Te es st t C Ci ir rc cu ui it t&WWa av ve ef fo or rmms sV Vd ds sL L-+2 2E E A A R R =1 1/2 2 L LI IA AR RB BV VD DS SS SIARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit&WaveformsVds-Vds+dI/dtRMrrVddVddQ =-Idttrr-Isd-Vds-IF-IV VD

20、DC CD DU UT TV Vd dd dV Vg gs sV Vd ds sV Vg gs sR RL LR Rg gR Re es si is st ti iv ve e S Sw wi it tc ch hi in ng g T Te es st t C Ci ir rc cu ui it t&WWa av ve ef fo or rmms s-+V Vg gs sV Vd ds stttttttttttt9 90 0%1 10 0%r rd d(o of ff f)f fo of ff fd d(o on n)Rev: 01.06.20185/6DMG3130LQSymbol Dim

21、ensions In Millimeters Dimensions In InchesMax MinMax MinA 1.150 0.900 0.045 0.035 A1 0.100 0.000 0.004 0.000 A2 1.050 0.900 0.041 0.035 b 0.500 0.300 0.020 0.012 c 0.150 0.080 0.006 0.003 D 3.000 2.800 0.118 0.110 E 1.400 1.200 0.055 0.047 E1 2.550 2.250 0.100 0.089 e 0.95 TYP.0.037 TYP.e1 2.000 1.800 0.079 0.071 L 0.55 REF.0.022 REF.L1 0.500 0.300 0.020 0.012 L2 0.25 TYP.0.01 TYP.8 0 8 0 SOT23 PACKAGE INFORMATION Shanghai Leiditech Electronic Co.,Ltd Email: Tel:+86-021 50828806 Fax:+86-021 50477059 Rev: 01.06.20186/6DMG3130LQ