SOT-523_LNTA7002NT1G.pdf
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1、 N-channel MOSFET SOT-523 1.GATE 2.SOURCE 3.DRAIN MOSFET MAXIMUM RATINGS(Ta=25C unless otherwise noted)Symbol?Parameter?Value?Unit?VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID Continuous Drain Current A PD Power Dissipation 0.15 W TJ Junction Temperature 150 Tstg Storage Temperature
2、 -55+150 RJA Thermal Resistance,Junction-to-Ambient 833 /W FEATURE?Low on-resistance?Fast switching speed?Low voltage drive makes this device ideal for?Easily designed drive circuits?Easy to parallel MARKING Equivalent Circuit Portable equipment V(BR)DSS RDS(on)MAX ID 30V150mA Interfacing,Switching
3、APPLICATION?TD*0.15 410V84.5VN-Channel Enhancement Mode Power MOSFET Rev 2.0: 1/3LNTA7002NT1G03.12.2021Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS=0V,ID=10A 30 V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 A Gate Source leaka
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- SOT 523 _LNTA7002NT1G