DFN5X6-8L_STL45N10F7AG.pdf
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1、 MOSFET technology to provide low RDS(ON),low gate charge,fast switching and excellent avalanche characteristics.This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on)&FOM Extremely low switching loss Excellent stability and uniformity or Invertors App
2、lications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application Package Marking and Ordering Information Product ID Pack Marking Qty(PCS)DFN5*6-8L 5000 Absolute Maximum Ratings at Tj=25 unless otherwise noted Parameter Symbol Value
3、 Unit Drain source voltage VDS 100 V Gate source voltage VGS 20 V Continuous drain current1),TC=25 ID 40 A Pulsed drain current2),TC=25 ID,pulse 120 A Power dissipation3),TC=25 PD 72 W Single pulsed avalanche energy5)EAS 30 mJ Operation and storage temperature Tstg,Tj -55 to 150 Thermal resistance,j
4、unction-case RJC 1.74 /W Enhancement Mode Field Effect TransistorN-Channel Rev 2.0: 12.01.20191/6STL45N10F7AGSTL45N10F7AG use advanced SGTSTL45N10F7AGAPG40N10NFThermal resistance,junction-ambient4)RJA 62 /W Electrical Characteristics at Tj=25 unless otherwise specified Parameter Symbol Test conditio
5、n Min.Typ.Max.Unit Drain-source breakdown voltage BVDSS VGS=0 V,ID=250 A 100 V Gate threshold voltage VGS(th)VDS=VGS,ID=250 A 1.0 2.5 V Drain-source on-state resistance RDS(ON)VGS=10 V,ID=8 A 16 20 m Drain-source on-state resistance RDS(ON)VGS=4.5 V,ID=6 A 26 m Gate-source leakage current IGSS 100 n
6、A VGS=20 V -100 Drain-source leakage current IDSS VDS=100 V,VGS=0 V 1 A Input capacitance Ciss VGS=0 V,VDS=50 V,=1 MHz 1190.6 pF Output capacitance Coss 194.6 pF Reverse transfer capacitance Crss 4.1 pF Turn-on delay time td(on)VGS=10 V,VDS=50 V,RG=2.2,ID=10 A 17.8 ns Rise time tr 3.9 ns Turn-off de
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