SOT-23 PMV19XNEA.pdf
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1、30V N-Channel Enhancement Mode MOSFETDescription General Features Application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3404BSOT-23 180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev:01.07.20211/ Absolute Maximum Ratings(TC
2、=25unless otherwise noted)5to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS=30V ID=4.2A RDS(ON)38m VGS=10V Lithium battery protection Wireless impact Mobile phone
3、 fast charging Symbol Parameter Max.Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V IDTA=25 Continuous Drain Current 4.2 A IDTA=70 Continuous Drain Current 2.6 A IDM Pulsed Drain Current 16 A PD Power Dissipation TA=25 1 W RJA Thermal Resistance,Junction to Ambient 125/W TJ,TSTG O
4、perating and Storage Temperature Range-55 to+150PMV19XNEAThe uses advanced trench technology PMV19XNEAPMV19XNEARev:01.07.20212/Electrical Characteristics(TJ=25,unless otherwise noted)5Symbol Parameter Test Condition Min.Typ.Max.Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 30 32-V IDS
5、S Zero Gate Voltage Drain Current VDS=30V,VGS=0V,-1.0 A IGSS Gate to Body Leakage Current VDS=0V,VGS=20V-100 nA VGS(th)Gate Threshold Voltage VDS=VGS,ID=250A 1.2 1.5 2.5 V RDS(on)Static Drain-Source on-Resistance note2 VGS=10V,ID=4A-29 38 m VGS=4.5V,ID=3A-45 65 Ciss Input Capacitance VDS=15V,VGS=0V,
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