![点击分享此内容 分享](/master/images/share_but.png)
SOT-23 SQ2301ES.pdf
《SOT-23 SQ2301ES.pdf》由会员分享,可在线阅读,更多相关《SOT-23 SQ2301ES.pdf(5页珍藏版)》请在文库网上搜索。
1、-20V P-Channel Enhancement Mode MOSFETDescription General Features Application DGSPackage Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity A1SHBSOT-23 180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev:01.07.20211/VDS=-20V IDBattery prote
2、ction Load switch Uninterruptible power supply Absolute Maximum Ratings(TC=25unless otherwise noted)5The SQ2301ES uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in
3、 other Switching application.=-2.3A RDS(ON)150m VGS=-4.5V SymbolParameterRatingUnitsVDS Drain-Source Voltage-20V VGS Gate-Source Voltage 12 V ID Drain Current-Continuous-2.3A IDM Drain Current-Pulsed(Note 1)-10A PD Maximum Power Dissipation 0.7 W TJ,TSTG Operating Junction and Storage Temperature Ra
4、nge-55 To 150 RJA Thermal Resistance,Junction-to-Ambient(Note 2)178/W SQ2301ESSQ2301ESRev:01.07.20212/Electrical Characteristics(TJ=25,unless otherwise noted)5Symbol Parameter Condition Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A-20-V IDSS Zero Gate Voltage Drain Current VD
5、S=-20V,VGS=0V-1A IGSS Gate-Body Leakage Current VGS=12V,VDS=0V-100 nA VGS(th)Gate Threshold Voltage VDS=VGS,ID=-250A-0.5-0.7-1.2V RDS(ON)Drain-Source On-State Resistance VGS=-4.5V,ID=-2 A-135 165 m VGS=-2.5V,ID=-1.8A-150 185 m gFS Forward Transconductance VDS=-5V,ID=-2A 4-S Clss Input Capacitance VD
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
0人已下载
免费下载 | 加入VIP,免费下载 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- SOT-23 SQ2301ES SOT 23
![提示](https://www.wenkunet.com/images/bang_tan.gif)