SOT-23_SE2312.pdf
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1、SE231220V N-Channel Enhancement Mode MOSFETDescription General Features Application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AE9TSE2312SOT-23 180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev:01.07.20211/ Absolute Maximum
2、 Ratings(TC=25unless otherwise noted)5Lithium battery protection Wireless impact Mobile phone fast charging The SE2312 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection
3、or in other Switching application.VDS=20V ID=6.8A RDS(ON)21m VGS=4.5V Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 20 V IDTA=25 Continuous Drain Current 6.8 A IDTA=70 Continuous Drain Current 6.0 A IDM Pulsed Drain Current2 30 A PDTA=25 Total Power Dissipation3
4、 1.5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RJA Thermal Resistance Junction-ambient 1 83 /W Rev:01.07.20212/Electrical Characteristics(TJ=25,unless otherwise noted)5 Symbol Parameter Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Vol
5、tage VGS=0V,ID=250A 20 22 V VGS(th)Gate Threshold Voltage VDS=VGS,ID=250A 0.50 0.65 1.0 V RDS(ON)Static Drain-Source On-Resistance VGS=4.5V,ID=4A 16 21 m RDS(ON)Static Drain-Source On-Resistance VGS=2.5V,ID=3A 20 30 IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V 1 A IGSS Gate-Body Leakage Curre
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- SOT 23 _SE2312