SOT-23_LMTL2N02.pdf
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1、LMTL2N0220V N-Channel Enhancement Mode MOSFETDescription General Features Application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity A2SHBLMTL2N02SOT-23 180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev:01.08.20211/ Absolute Ma
2、ximum Ratings(TC=25unless otherwise noted)5 The LMTL2N02 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS=20V ID=2.3A RDS(ON)56m V
3、GS=4.5V Battery protection Load switch Uninterruptible power supply Symbol Parameter Limit Unit VDS Drain-source Voltage 20 V VGS Gate-source Voltage 12 V ID TA=25 Continuous Drain Current VGS 4.5V 2.3 A ID TA=70 Continuous Drain Current VGS 4.5V 1.8 A IDM Pulsed Drain Current A 14 A PD Total Power
4、Dissipation TA=25 0.7 W RJA Thermal Resistance Junction-to-AmbientSteady State 178/W TJ,TSTG Junction and Storage Temperature Range-55+150 Rev:2/Electrical Characteristics(TJ=25,unless otherwise noted)5 Symbol Parameter Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250A
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