TO-252_AUIRFR540Z.pdf
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1、 Description uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.General Features VDS=100V ID=50A RDS(ON)28m VGS=10V Application Battery
2、protection Load switch Uninterruptible power supply Package Marking and Ordering Information Absolute Maximum Ratings(TC=25unless otherwise noted)Symbol Parameter Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V ID Drain Current-Continuous 50 A ID(100)Drain Current-Continuous(T
3、C=100)21 A IDM Pulsed Drain Current 70 A PD Maximum Power Dissipation 85 W Derating factor 0.57 W/EAS Single pulse avalanche energy(Note 5)256 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 RJC Thermal Resistance,Junction-to-Case(Note 2)1.8 /W Product ID Pack Marking Qty(PCS)
4、TO-252 2500 Enhancement Mode MOSFET N-Channel Rev 2.0: 12.01.20191/5AUIRFR540ZThe AUIRFR540ZAUIRFR540ZAP50N10D Electrical Characteristics(TC=25unless otherwise noted)Symbol Parameter Condition Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250A 100 -V IDSS Zero Gate Voltage Drain Cu
5、rrent VDS=100V,VGS=0V -1 A IGSS Gate-Body Leakage Current VGS=20V,VDS=0V -100 nA VGS(th)Gate Threshold Voltage VDS=VGS,ID=250A 1 3 V RDS(ON)Drain-Source On-State Resistance VGS=10V,ID=20A -24 28 m RDS(ON)Drain-Source On-State Resistance VGS=4.5V,ID=10A -28 30 m gFS Forward Transconductance VDS=5V,ID
6、=10A -15 -S Clss Input Capacitance VDS=25V,VGS=0V,F=1.0MHz -2000 -PF Coss Output Capacitance -300 -PF Crss Reverse Transfer Capacitance -250 -PF td(on)Turn-on Delay Time VDD=50V,RL=5 VGS=10V,RGEN=3 -7 -nS tr Turn-on Rise Time -7 -nS td(off)Turn-Off Delay Time -29 -nS tf Turn-Off Fall Time -7 -nS Qg
7、Total Gate Charge VDS=50V,ID=10A,VGS=10V -39 -nC Qgs Gate-Source Charge -8 -nC Qgd Gate-Drain Charge -12 -nC VSD Diode Forward Voltage(Note 3)VGS=0V,IS=20A -1.2 V IS Diode Forward Current(Note 2)-30 A trr Reverse Recovery Time TJ=25C,IF=10A di/dt=100A/s(Note3)-32 -nS Qrr Reverse Recovery Charge -53
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