石墨烯基电子学中的平面异质结研究进展.pdf
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1、文章编号:摇 1007鄄8827(2018)06鄄0481鄄12石墨烯基电子学中的平面异质结研究进展刘俊江1,2,摇 李锐杰2,3,摇 李摇 杭2,4,摇 李贻非2,摇 易俊何2,摇 王海成3,摇 赵晓冲4,摇 刘培植1,摇 郭俊杰1,摇 刘摇 磊2(1. 太原理工大学 新材料界面科学与工程教育部重点实验室, 山西 太原 030024;2. 北京大学 工学院材料科学与工程系, 北京 100871;3. 北京科技大学 国家材料服役安全科学中心, 北京 100083;4. 中国工程物理研究院 材料研究所, 四川 江油 621908)摘摇 要:摇 二维平面晶体,由于能带结构的多样性和与半导体平面工艺
2、兼容的特点,被认为在电子学中是延续摩尔定律的候选材料之一;同时它具备易转移、光学透明、能带可调等特点,在柔性电子学和光电子学方面展示出巨大的潜在应用。 将电路所需的具有不同导电性能的二维材料在平面内实现空间上的可控集成,是实现单原子层二维电子学的首要问题。 综述了最近在石墨烯基电子学中平面异质结的研究进展,包括石墨烯鄄绝缘体和石墨烯鄄半导体异质结,集中在可控制备、对界面结构的原子尺度研究、以及逻辑功能原型器件研究。 最后简述当前该领域面临的挑战和研究前景。关键词:摇 石墨烯; 面内异质结; 界面结构; 场效应晶体管; 逻辑器件中图分类号: 摇 TQ127. 1+1文献标识码: 摇 A通讯作者:
3、郭俊杰,教授. E鄄mail: guojunjie tyut. edu. cn;刘摇 磊,研究员. E鄄mail: leiliu1 pku. edu. cn作者简介:刘俊江,李锐杰为共同第一作者.Graphene鄄based in鄄plane heterostructures for atomically thin electronicsLIU Jun鄄jiang1,2,摇 LI Rui鄄jie2,3,摇 LI Hang2,4,摇 LI Yi鄄fei2,摇 YI Jun鄄he2,摇 WANG Hai鄄cheng3,摇 ZHAO Xiao鄄chong4,摇 LIU Pei鄄zhi1,摇 GUO
4、Jun鄄jie1,摇 LIU Lei2(1. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education,Taiyuan University of Technology, Taiyuan030024, China;2. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing100871, China;3. Nati
5、onal Center for Materials Service Safety, University of Science and Technology Beijing, Beijing100083, China;4. Institute of Materials, Chinese Academy of Engineering Physics, Jiangyou621908, China)Abstract: 摇 Two鄄dimensional materials are promising for use in atomically thin electronics, optoelectr
6、onics and flexible electronicsbecause of their versatile band structures, optical transparency, easy transfer to a substrate and compatibility with current technologyfor integrated circuits. Three key components of contemporary integrated circuits, metals, insulators and semiconductors, have ana鄄log
7、ues in two鄄dimensional materials, i. e. , graphene, boron nitride (BN) and transition metal dichalcogenides (TMDCs), respec鄄tively. Their controlled integration in a single layer is essential for achieving completely two鄄dimensional devices. In this review, webriefly describe the latest advances in
8、graphene鄄based planar heterostructures, in graphene鄄BN, and in graphene鄄TMDC heterojunc鄄tions, focusing on the fabrication methods, the interfacial structure characteristics at the atomic scale and the properties of prototypeelectronic devices. The challenges and prospects in this field are also dis
9、cussed.Key words:摇 Graphene; In鄄plane heterostructure; Interface structure; Field鄄effect transistor; Logic deviceReceived date: 2018鄄10鄄26;摇Revised date: 2018鄄12鄄02Corresponding authors: GUO Jun鄄jie, Professor. E鄄mail: guojunjie tyut. edu. cn;LIU Lei, Professor. E鄄mail: leiliu1 pku. edu. cnAuthor in
10、troduction: LIU Jun鄄jiang and LI Rui鄄jie contributed equally to this work.English edition available online ScienceDirect (http:蛐蛐www. sciencedirect. com蛐science蛐journal蛐18725805).DOI: 10. 1016/ S1872鄄5805(18)60352鄄X摇第 33 卷摇 第 6 期2018 年 12 月新摇 型摇 炭摇 材摇 料NEW CARBON MATERIALSVol. 33摇 No. 6Dec. 2018摇1摇
11、IntroductionIn 1965, Intel co鄄founder Gordon Moore had theprediction of the famous Moore爷s law based on thesimple observation that the number of transistors persquare inch on integrated circuits will double everyyear1,and it has been proven correct during the lasthalf鄄century. Nowadays, as a gate no
12、de in siliconcomplementary metal鄄oxide鄄semiconductor (CMOS)device get smaller, the rising leakage currents andpower dissipation together constitute the major chal鄄lenge for further reducing the size. Next鄄generation e鄄lectronics call for the alternatives of newly鄄developedchannel materials or novel
13、device concept.Mean鄄while, the semiconductor market, for example, wear鄄able devices and transparent display, requests distinctproperties of components in the materials爷 perspec鄄tive.Since the first successful isolation of graphene in20042, two鄄dimensional (2D) materials, free ofdangling bonds in the
14、 3rddimension, has attractedenormous attention owing to the versatile choices in2D library3,4, interesting physics5,6and superiorchemical properties7,8and promising applications9.In particular, 2D materials possess optically transpar鄄ent and mechanically transferrable features and can bebent without
15、 compromising their performance toomuch, making them suitable for the specific applica鄄tions in transparent and flexible electronics10,11. Thesound integration of multi 2D materials who hold dif鄄ferent electrical properties to achieve logic function isone of the critical steps towards 2D electronics
16、12.While graphene, one celebrated 2D material, canserve as the very conducting metal13, 2D crystalscan also provide insulators, for example boron nitride(BN) as a dielectric, and semiconductors14liketransition metal dichalcogenides (TMDCs)15, con鄄stituting a full set of three key building blocks for
17、 2Delectronics. Also, these 2D materials and their in鄄plane heterostructures have been prepared by thechemical vapor deposition (CVD) method in a con鄄trolled manner16, providing a solid foundation forexploring 2D electronics17.In this Review, we mainly focus on the growthmethods of the graphene鄄base
18、d 2D planar junction,the interface structures and properties, and the proto鄄type electronic devices, as shown in Fig. 1. The in鄄plane epitaxial growth is highlighted to generate theunique one鄄dimensional (1D) interfaces.We alsocomment on the vital challenges 2D electronics facedand potential applica
19、tions when incorporated with 3Dconventional devices.Fig. 1摇 Schematic for graphene鄄based in鄄planeheterostructures for 2D electronics,including graphene鄄BN and graphene鄄TMDC heterostructures.摇 摇2 摇Synthesis of lateral BN鄄graphene(BN鄄G) heterostructures by CVD摇 摇 Due to the concise configuration of th
20、e setup andhigh repeatability of growth recipe, the CVD ap鄄proach is widely accepted for the synthesis of low鄄di鄄mensionalnanostructures,including1Dnano鄄tubes18,19, nanowires20and 2D thin films21. Withthe incorporation of metal catalysis, the growth tem鄄perature can be enormously reduced to have a m
21、ildand well鄄controlled process. In particular, one mile鄄stone in graphene synthesis is achieved by Li et al.with large鄄area graphene monolayers on commercialCu foils22, although about one year ago. Reina etal. reported multilayer graphene films can be obtainedby the CVD growth on the deposited polyc
22、rystallineNi film23.In contemporaneity, two groups havedemonstrated that atmospheric vapor CVD can be a鄄dapted to hexagonal BN thin film as well24,25. Theworks lay at the basis of the in鄄plane BN鄄G hetero鄄structure growth via the CVD approach on the samecatalytic metal surface by introducing corresp
23、ondingprecursors into thereactionhot zonesequential鄄ly26,27. In this section, we will discuss two types ofin鄄plane growth stemming from two distinct purposes.2. 1摇 Designed patterning in BN鄄G heterostructuresWhile precisely spatial control down to tens ofnanometer over the transport properties in th
24、e thin filmcan be achieved in contemporary integrated circuits bymature nanofabrication procedures, the designed pat鄄terning in BN鄄G films has been pursued naturally afterthe success of growing graphene and h鄄BN individual鄄ly. The pioneering work demonstrated by Levendorfet al. called the strategy “
25、patterned regrowth冶, whichresults in a mechanically continuous BN鄄G hetero鄄284摇新摇 型摇 炭摇 材摇 料第 33 卷structure film12. As shown in Fig. 2a, the first gra鄄phene film represented by G1was grown on Cu foil;with the photolithography (PL) and reactive ion etch鄄ing (RIE), graphene film was partially etched f
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